D-SIMS

Dynamic Secondary Ion Mass Spectrometry (D-SIMS)

Technique:

Secondary ion mass spectrometry (SIMS) provides elemental and isotopic analysis of very small volumes situated on the surface of solid samples. Operated in dynamic SIMS mode, an energetic primary ion beam sputters ions and neutrals from the sample surface. Some of the sputtered material is ejected either as positive or negative secondary ions. Therefore, each point of the surface becomes a source of secondary ions that are characteristic of the elements or isotopes found in the near surface region. These secondary ions are further mass analyzed in a magnetic sector mass spectrometer. By rastering the primary ion beam, a distribution map of elements and isotopes from the analyzed region of the sample can be obtained. This technique is inherently “destructive” due to the collisional interaction of the primary ions with the sample, although the extent of the surface damage can be controlled by an appropriate optimization of the parameters of the primary ion source. cameca 6f Cameca 6f Dynamic SIMS

The dynamic SIMS (D-SIMS) mode is characterized by the use of high density, DC primary ion beam currents providing typical sputter rates in the range 0.5-5nm/s. Under such conditions most chemical bonds are broken and only atoms or polyatomic fragments are ejected from the sample surface as neutrals or ions, thus restricting D-SIMS applications to elemental and isotopic depth profiling or mapping. The detection range of this technique extends from matrix element levels down to trace element levels in the ppb range.

Instrument:
Cameca IMF-6f SIMS

System Capabilities:

  • State of the art instrument that includes numerous improvements on the 3f
  • Laminated electromagnet allowing faster switching between masses and improved stability
  • Outstanding mass resolving power
  • Improved transmission resulting in lower detection limits

Instrument:
Cameca IMS-3f SIMS

System Capabilities:

  • Many upgrades to original instrument including, faster counting system, post acceleration, custom enhanced imaging system, new computer/software control, etc.

SIMS Capabilities:

  • Elemental analysis covering the entire periodic table
  • Quantitative microanalysis with detection limits of 200-300ppb, which effectively addresses the analytical gap between the electron microprobe (MDL≥ 500ppm) and bulk analytical techniques (MDL≈ low ppb)
  • Elemental depth profiling
  • Imaging of the elemental distribution with 1µm spatial resolution

Selected Applications in Industry:

  • Negative ion SIMS spectrum of the mineral arsenopyrite
  • Negative ion SIMS depth profile of Ni layer on Cu substrate
  • Positive ion SIMS depth profile of an aluminum oxide/metal interface
  • Images from a tinplated steel sample used for food canning